Electrical Characterization of Microelectromechanical Silicon Carbide Resonators
نویسندگان
چکیده
منابع مشابه
Electrical Characterization of Microelectromechanical Silicon Carbide Resonators
This manuscript describes the findings of a study to investigate the performance of SiC MEMS resonators with respect to resonant frequency and quality factor under a variety of testing conditions, including various ambient pressures, AC drive voltages, bias potentials and temperatures. The sample set included both single-crystal and polycrystalline 3C-SiC lateral resonators. The experimental re...
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This chapter serves as a brief introduction to the basic properties of silicon carbide (SiC) and the advantages of using SiC over other semiconductor materials for microelectromechanical systems (MEMS). Given the excellent and extensive review chapters that follow this one, I have confined this chapter to recent research performed at the University of Edinburgh in the area of SiC microelectrome...
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For a microelectromechanical (MEM) resonator, the combination of mechanical nonlinearity and electrical driving force can lead to bistability. In such a case, the system exhibits two coexisting stable oscillatory states (attractors): one with low and another with high energy. Under the influence of noise, with high probability the system can be perturbed into the low-energy state. We propose a ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2008
ISSN: 1424-8220
DOI: 10.3390/s8095759